Theoretical model and simulation of the extremely short external cavity semiconductor laser

Guangqiong Xia; Zhengmao Wu; Jiagui Wu; Zhaoyun Li; Qi Yang; Bingxing Yang

doi:10.1117/12.736619

19 November 2007 Theoretical model and simulation of the extremely short external cavity semiconductor laser

Guangqiong Xia, Zhengmao Wu, Jiagui Wu, Zhaoyun Li, Qi Yang, Bingxing Yang

Proceedings Volume 6782, Optoelectronic Materials and Devices II; 67821G (2007) https://doi.org/10.1117/12.736619
Event: Asia-Pacific Optical Communications, 2007, Wuhan, China

Abstract

Based on the ray tracing method, the implicit expression of the output spectrum of the extremely short external cavity semiconductor Laser (ESECSL) is derived, and the output spectrum and P-I characteristic of the ESECSL are investigated. The results show that: when the length of external cavity is changed at the order of wavelength, the P-I characteristics of the ESECSL will undergo significant changes; with the variation of the external cavity length, the lasing wavelength of ESECSL will behave cyclical jump in the range of 10nm. Especially, for the external cavity length changed within the range of 40μm-70μm, the jump range of the lasing wavelength will reach the maximum. The simulations well agree with the experimental results reported.

Citation Download Citation

Guangqiong Xia, Zhengmao Wu, Jiagui Wu, Zhaoyun Li, Qi Yang, and Bingxing Yang "Theoretical model and simulation of the extremely short external cavity semiconductor laser", Proc. SPIE 6782, Optoelectronic Materials and Devices II, 67821G (19 November 2007); https://doi.org/10.1117/12.736619

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