InAs/InP based quantum dot mode-locked semiconductor lasers at 1.5 um

Guang-Hua Duan; F. Lelarge; B. Dagens; R. Brenot; A. Accard; A. Shen; F. van Dijk; D. Make; O. Le Gouezigou; L. Le Gouezigou; J.-G. Provost; F. Poingt; J. Landreau; O. Drisse; E. Derouin; B. Rousseau; F. Pommereau

doi:10.1117/12.754399

26 November 2007 InAs/InP based quantum dot mode-locked semiconductor lasers at 1.5 μm

Guang-Hua Duan, F. Lelarge, B. Dagens, R. Brenot, A. Accard, A. Shen, F. van Dijk, D. Make, O. Le Gouezigou, L. Le Gouezigou, J.-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau

Author Affiliations +

Proceedings Volume 6782, Optoelectronic Materials and Devices II; 67821V (2007) https://doi.org/10.1117/12.754399
Event: Asia-Pacific Optical Communications, 2007, Wuhan, China

Abstract

This paper summarizes recent advances on InAs/InP mode-locked quantum dashes (QD) lasers, and their applications for all-optical clock recovery, short pulse generation and millimeter wave generation. We demonstrate that QD FP lasers, owing to the small confinement factor and the 3D quantification of electronic energy levels, exhibit a beating linewidth as narrow as 15 kHz. Such an extremely narrow linewidth, compared to their QW or bulk counterparts, leads to the excellent phase noise and time jitter characteristics when QD lasers are actively mode-locked. We report also on an actively mode-locking tunnel injection quantum dash Fabry-Perot laser diode at 42.7GHz, generating nearly Fourier transform limited pulses with a pulse width of 2ps over 16nm.

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Guang-Hua Duan, F. Lelarge, B. Dagens, R. Brenot, A. Accard, A. Shen, F. van Dijk, D. Make, O. Le Gouezigou, L. Le Gouezigou, J.-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, and F. Pommereau "InAs/InP based quantum dot mode-locked semiconductor lasers at 1.5 μm", Proc. SPIE 6782, Optoelectronic Materials and Devices II, 67821V (26 November 2007); https://doi.org/10.1117/12.754399

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