19 November 2007 Multi-quantum-well InGaNAs/GaAs resonant cavity enhanced photodetector with integrated vertical taper structure
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Proceedings Volume 6782, Optoelectronic Materials and Devices II; 678223 (2007) https://doi.org/10.1117/12.743594
Event: Asia-Pacific Optical Communications, 2007, Wuhan, China
Abstract
In this work, we analyzed and demonstrated a multi-quantum-well InGaNAs/GaAs RCE photodetector with a vertical taper absorption cavity operating at 1550nm. The GaAs/AlAs distributed Bragg reflectors and InGaNAs/GaAs quantum wells were grown on GaAs substrate by molecular beam epitaxy. The growth of InGaNAs/GaAs quantum wells maybe solves the problem that the GaAs-based materials can only response to short wavelength. The peak wavelength of the spectral response of our photodetector is at 1558.7nm, and the spectral linewidth is 3 nm.
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Yu-feng Xu, Yong-Qing Huang, Hui Huang, Xiao-Min Ren, "Multi-quantum-well InGaNAs/GaAs resonant cavity enhanced photodetector with integrated vertical taper structure", Proc. SPIE 6782, Optoelectronic Materials and Devices II, 678223 (19 November 2007); doi: 10.1117/12.743594; https://doi.org/10.1117/12.743594
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