12 December 2007 Large aperture low threshold current 980nm VCSELs fabricated with pulsed anodic oxidation
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Proceedings Volume 6782, Optoelectronic Materials and Devices II; 678228 (2007) https://doi.org/10.1117/12.742775
Event: Asia-Pacific Optical Communications, 2007, Wuhan, China
Abstract
Pulsed anodic oxidation technique, a new way of forming current blocking layers, was successfully used in ridge-waveguide QW laser fabrication. We apply this method in 980nm VCSELs fabrication to form a high-quality native oxide current blocking layer, which simplify the device process. A significant reduction of threshold current and a distinguished device performance are achieved. The 500μm-diameter device has a current threshold as low as 0.48W. The maximum CW operation output power at room temperature is 1.48W. The lateral divergence angle θparalleland vertical divergence angle θperpendicular are as low as 15.3° and 13.8° without side-lobes at a current of 6A.
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Jinjiang Cui, Yongqiang Ning, Te Li, Guangyu Liu, Yan Zhang, Biao Peng, Yanfang Sun, Lijun Wang, "Large aperture low threshold current 980nm VCSELs fabricated with pulsed anodic oxidation", Proc. SPIE 6782, Optoelectronic Materials and Devices II, 678228 (12 December 2007); doi: 10.1117/12.742775; https://doi.org/10.1117/12.742775
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