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26 November 2007 Structural and optical properties of InGaN/GaN multiple quantum wells structure for ultraviolet emission
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Proceedings Volume 6782, Optoelectronic Materials and Devices II; 67822D (2007) https://doi.org/10.1117/12.742512
Event: Asia-Pacific Optical Communications, 2007, Wuhan, China
Abstract
InGaN/GaN multiple quantum wells (MQWs) structure for ultraviolet emission has been grown on sapphire by metalorganic chemical vapor deposition (MOCVD). The High resolution x-ray diffraction (HRXRD), atomic-force microscopy (AFM) and photoluminescence (PL) are used to characterize the structural and optical prosperities of MQWs, respectively. HRXRD shows multiple satellite peaks to 3rd order indicates the high quality of InGaN/GaN layer interface. AFM measurement shows that there are some spiral growth hillocks and 3D nanostructures on the MQWs surface. They are related with the surface kinetics or thermodynamics of InGaN growth. Temperature-dependent PL results show that there exists a clear excition-localization effect in the InGaN/GaN MQWs. The fitted σvalue of InGaN/GaN MQWs is around 8meV. The emission peak was almost unchanged with the increase PL excitation power. Those results indicate there is almost none piezoelectric field-induced quantum-confined stark effect in the InGaN/GaN MQWs due to the low In content and thin quantum well thickness.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Baozhu Wang, Xiaoliang Wang, Huanming Wen, Ruihong Wu, Guoxin Hu, Junxue Ran, and Hongling Xiao "Structural and optical properties of InGaN/GaN multiple quantum wells structure for ultraviolet emission", Proc. SPIE 6782, Optoelectronic Materials and Devices II, 67822D (26 November 2007); https://doi.org/10.1117/12.742512
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