19 November 2007 Research of photodetector and its array in standard CMOS technology
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Proceedings Volume 6782, Optoelectronic Materials and Devices II; 67822G (2007) https://doi.org/10.1117/12.745704
Event: Asia-Pacific Optical Communications, 2007, Wuhan, China
Abstract
Silicon photodetector is easy to be integrated with all kinds of Silicon IC to get monolithically OEIC. And the photodetector array is also widely applied. A kind of CMOS-process-compatible N+/N-Well/P-Sub photodetector and its array are analyzed in this paper. Depended on the basic time-dependent equations of photodetctor and analyzed by Laplace transform method, the intrinsic frequency response characteristic is numerically calculated. The effect of reverse bias voltage on spectral responsivity is also discussed. The photodetector is fabricated in 0.5μm CMOS process. At 780nm wavelength incident light, the measured and calculated responsivity are 0.253A/W and 0.251A/W, respectively. The variety of measured responsivity with bias voltage is about 1.8mA/(W•V). At a reverse voltage of 5V, the maximum dark current is 0.148nA. And the junction capacitance and -3dB frequency are also measured. The crosstalk factor of photodetector with PN junction isolation and 5μm isolated space in CMOS technology is less than 5%.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jiantao Bian, Jiantao Bian, Xiang Cheng, Xiang Cheng, Chao Chen, Chao Chen, } "Research of photodetector and its array in standard CMOS technology", Proc. SPIE 6782, Optoelectronic Materials and Devices II, 67822G (19 November 2007); doi: 10.1117/12.745704; https://doi.org/10.1117/12.745704
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