19 November 2007 Structural and photoluminescence properties of porous silicon with r.f.-sputtered thin films
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Proceedings Volume 6782, Optoelectronic Materials and Devices II; 678234 (2007) https://doi.org/10.1117/12.746311
Event: Asia-Pacific Optical Communications, 2007, Wuhan, China
Abstract
Thin Sn films in the thickness range 0.3-2nm are deposited by r.f.-sputtering on porous silicon (PS) anodized on p-type silicon. Microstructural features of the samples before and after r.f.-tin-sputtered are investigated with scanning electron microscopy (SEM). The photoluminescence (PL) studies showed that a broad luminescence peak of PS near the 621nm region gets a reduction in intensity, and a new peak at 441nm was produced at first and then disappeared. The FTIR spectra on the PS/Sn structure revealed no major change of the native PS peaks.
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Yujuan Zhang, Zhenhong Jia, "Structural and photoluminescence properties of porous silicon with r.f.-sputtered thin films", Proc. SPIE 6782, Optoelectronic Materials and Devices II, 678234 (19 November 2007); doi: 10.1117/12.746311; https://doi.org/10.1117/12.746311
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