19 November 2007 Performance analysis of all optical XOR gate using quantum dot semiconductor optical amplifier-based Mach-Zehnder interferometer
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Proceedings Volume 6782, Optoelectronic Materials and Devices II; 678237 (2007); doi: 10.1117/12.743661
Event: Asia-Pacific Optical Communications, 2007, Wuhan, China
Abstract
Based on rate equations for carrier density in the active region of the QDSOA, the performance of a XOR gate using a quantum-dot semiconductor optical amplifier- based Mach-Zehnder interferometer (QDSOA-MZI) is analyzed in terms of Q factor through numerical simulations. The control pulse energy, the pulse width and the carrier capture time from the wetting layer into the dots are examined, which prove to be relevant to the Q factor. Our numerical results show that at 160Gb/s a high quality output signal with a Q factor over 5.9dB can be achieved.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Huining Han, Fangdi Zhang, Wei Yang, Libo Cai, Min Zhang, Peida Ye, "Performance analysis of all optical XOR gate using quantum dot semiconductor optical amplifier-based Mach-Zehnder interferometer", Proc. SPIE 6782, Optoelectronic Materials and Devices II, 678237 (19 November 2007); doi: 10.1117/12.743661; https://doi.org/10.1117/12.743661
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KEYWORDS
Quantum dots

Mach-Zehnder interferometers

Semiconductors

Optical semiconductors

Quantum optics

Active optics

Numerical simulations

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