19 November 2007 Self-seeding injection of anti-reflection coated FP laser amplifier based transmitters for wavelength division multiplexing PON
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Proceedings Volume 6783, Optical Transmission, Switching, and Subsystems V; 67832W (2007); doi: 10.1117/12.745046
Event: Asia-Pacific Optical Communications, 2007, Wuhan, China
Abstract
We experimentally demonstrate a directly modulated 1% AR-FPLA based ONU under side-mode injection-locking for 1.25Gbits/s DWDM-PON application. With side-mode injection of this device, the characterizes of 34-channel detuning capacity under self seeding and its corresponding to a wavelength locking range of 30 nm is a potential candidate to achieve the cost effective and high capability 1.25 Gbits/s DWDM-PON systems. The effects of the front-facet reflectivity in the AR-FPLA on injection locking range, spontaneous emission, and Q-factor are interpreted from our results. A BER of <10-12 is obtained for the nearest 17 channels and a 10-10 error rate can be achieved for all of the 34 injection-locked channels with SMSR >35dB, providing a negative power penalty of -0.7 dB.
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Gong-Cheng Lin, Sun-Chien Ko, Yin-Hsun Huang, Hai-Lin Wang, Yu-Sheng Liao, Gong-Ru Lin, "Self-seeding injection of anti-reflection coated FP laser amplifier based transmitters for wavelength division multiplexing PON", Proc. SPIE 6783, Optical Transmission, Switching, and Subsystems V, 67832W (19 November 2007); doi: 10.1117/12.745046; https://doi.org/10.1117/12.745046
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KEYWORDS
WDM-PON

Reflectivity

Transmitters

Modulation

Eye

Laser amplifiers

Light sources

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