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11 September 2007 Structure and optical properties of pulsed-laser-deposited AlN thin films for optoelectronic applications
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Proceedings Volume 6785, ROMOPTO 2006: Eighth Conference on Optics; 67850H (2007) https://doi.org/10.1117/12.756820
Event: ROMOPTO 2006: Eighth Conference on Optics, 2006, Sibiu, Romania
Abstract
The structure and optical properties of AlN thin films synthesized at 800°C by Pulsed Laser Deposition were studied in terms of ambient nitrogen pressure (10-4-10 Pa) and post-deposition cooling rate (5-25°C/min). X-ray diffraction patterns showed the films were polycrystalline with predominantly cubic phase and small-sized crystallites. The refractive index and oscillator energies values were also characteristic of the polycrystalline AlN with cubic structure.
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S. Bakalova, A. Szekeres, A. Cziraki, S. Grigorescu, G. Socol, E. Axente, and I. N. Mihailescu "Structure and optical properties of pulsed-laser-deposited AlN thin films for optoelectronic applications", Proc. SPIE 6785, ROMOPTO 2006: Eighth Conference on Optics, 67850H (11 September 2007); https://doi.org/10.1117/12.756820
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