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2 May 2008 Status of EUVL reticle chucking
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Proceedings Volume 6792, 24th European Mask and Lithography Conference; 67920X (2008) https://doi.org/10.1117/12.798937
Event: 24th European Mask and Lithography Conference, 2008, Dresden, Germany
Abstract
Extreme Ultraviolet Lithography (EUVL) is one of the leading candidates for Next-Generation Lithography in the sub-45-nm regime. Successful implementation of this technology will depend upon advancements in many areas, including the quality of the mask system to control image placement errors. For EUVL, the nonflatness of both the mask and chuck is critical, due to the nontelecentric illumination during exposure. The industry is proposing to use an electrostatic chuck to support and flatten the mask in the exposure tool. The focus of this research is to investigate the clamping ability of a pin-type chuck, both experimentally and with the use of numerical simulation tools, i.e., finite element modeling. A status report on electrostatic chucking is presented, including the results obtained during repeatability studies and long-term chucking experiments.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Roxann L. Engelstad, Jaewoong Sohn, Jacob R. Zeuske, Venkata Siva Battula, Pradeep Vukkadala, Chris K. Van Peski, Kevin J. Orvek, Kevin T. Turner, Andrew R. Mikkelson, and Madhura Nataraju "Status of EUVL reticle chucking", Proc. SPIE 6792, 24th European Mask and Lithography Conference, 67920X (2 May 2008); https://doi.org/10.1117/12.798937
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