3 April 2008 Negative differential capacitance of AlGaN/GaN heterostructure in presence of InN quantum dots
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Proceedings Volume 6793, International Workshop and Conference on Photonics and Nanotechnology 2007; 679304 (2008) https://doi.org/10.1117/12.798950
Event: International Workshop and Conference on Photonics and Nanotechnology 2007, 2007, Pattaya, Thailand
Abstract
In this work the capacitance of AlGaN/GaN heterostructure in presence of InN quantum dots has been studied. This calculation has been done for different InN quantum Dot size, energy dispersion and in different temperatures. The presence of InN quantum dot will cause a negative differential capacitance which can evidence the position of quantum dots in the structures. Our calculation results show this negative differential capacitance is much higher at low temperature and for quantum dots with low energy and higher size dispersion.
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Asghar Asgari, Asghar Asgari, "Negative differential capacitance of AlGaN/GaN heterostructure in presence of InN quantum dots", Proc. SPIE 6793, International Workshop and Conference on Photonics and Nanotechnology 2007, 679304 (3 April 2008); doi: 10.1117/12.798950; https://doi.org/10.1117/12.798950
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