3 April 2008 Temperature-dependent photoluminescence investigation of narrow well-width InGaAs/InP single quantum well
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Proceedings Volume 6793, International Workshop and Conference on Photonics and Nanotechnology 2007; 67930C (2008) https://doi.org/10.1117/12.799254
Event: International Workshop and Conference on Photonics and Nanotechnology 2007, 2007, Pattaya, Thailand
Abstract
The formation of In0.53Ga0.47As/InP single quantum well with narrow well width grown by Organometallic Vapor Phase Epitaxy is verified by photoluminescence spectroscopy. PL spectra exhibit the e(1)-hh(1) transition in the well. PL measurement was conducted at various temperatures from 15K to 200K in order to investigate the important temperature-dependent parameters of this structure. Important parameters such as activation energies responsible for the photoluminescence quenching and broadening mechanisms are achieved. Because of small thermal activation energy of 15.1 meV in the narrow well, carriers can escape from the well to the barrier states. The dependence of PL width on temperature revealed that Inhomogeneous mechanism is the dominant mechanism for the broadening of PL peak and homogeneous mechanism is responsible at high temperature due to electron-phonon interaction.
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W. Pecharapa, W. Techitheera, P. Thanomgam, J. Nukeaw, "Temperature-dependent photoluminescence investigation of narrow well-width InGaAs/InP single quantum well", Proc. SPIE 6793, International Workshop and Conference on Photonics and Nanotechnology 2007, 67930C (3 April 2008); doi: 10.1117/12.799254; https://doi.org/10.1117/12.799254
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