3 April 2008 Shooting method calculation of temperature dependence of transition energy for quantum well structure
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Proceedings Volume 6793, International Workshop and Conference on Photonics and Nanotechnology 2007; 67930L (2008) https://doi.org/10.1117/12.799424
Event: International Workshop and Conference on Photonics and Nanotechnology 2007, 2007, Pattaya, Thailand
Abstract
The ground state transition energy as various temperatures of a single quantum well structure has been calculated. The numerical technique called shooting method was developed to get eigen values and eigen functions. Passler's model and Aspnes's equation are adopted to calculate the energy gap (Eg) of Al0.3Ga0.7As and GaAs respectively. Our calculation has been tested by comparing the results to PL experimental data of Al0.3Ga0.7As / GaAs single quantum well. Good agreement has been found in the low temperature range (less than 40 K) and fair result has been obtained in the range of temperature higher than 40 K.
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Bunjong Jukgoljun, Bunjong Jukgoljun, Wisanu Pecharapa, Wisanu Pecharapa, Wicharn Techitdheera, Wicharn Techitdheera, } "Shooting method calculation of temperature dependence of transition energy for quantum well structure", Proc. SPIE 6793, International Workshop and Conference on Photonics and Nanotechnology 2007, 67930L (3 April 2008); doi: 10.1117/12.799424; https://doi.org/10.1117/12.799424
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