9 January 2008 Total ionizing dose effects on the IGBT performance for a DC-DC converter
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Proceedings Volume 6794, ICMIT 2007: Mechatronics, MEMS, and Smart Materials; 679438 (2008) https://doi.org/10.1117/12.783855
Event: ICMIT 2007: Mechatronics, MEMS, and Smart Materials, 2007, Gifu, Japan
Abstract
IGBT in power system has been dominating MOS (Metal Oxide Semiconductor) transistor since IGBTs (Insulated Gate Bipolar Transistor) guarantee better conduction loss and large current capacity. The radiation induced characteristics of IGBT are mainly emphasized the threshold shifting due to the oxide charge trapping in MOS and the reduction of current gain in the bipolar transistor being inherently composed in the IGBT structure. A lot of analysis on IGBT irradiation has been carried out by researchers. The IGBT in the converter plays an important role in switching. In this paper, the IGBT macro-model for the DC/DC converter is implemented and analyzed the electrical characteristics by SPICE simulation model. In addition, the design SPICE parameters of BF (forward beta), KP (MOS trans-conductance), and VT (threshold voltage) by γ radiation effects are evaluated.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Young Hwan Lho, Young Hwan Lho, Sang Yong Lee, Sang Yong Lee, Phil-Hyun Kang, Phil-Hyun Kang, } "Total ionizing dose effects on the IGBT performance for a DC-DC converter", Proc. SPIE 6794, ICMIT 2007: Mechatronics, MEMS, and Smart Materials, 679438 (9 January 2008); doi: 10.1117/12.783855; https://doi.org/10.1117/12.783855
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