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26 October 2007 Ion implanted integrated Bragg gratings in SOI waveguides
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Proceedings Volume 6796, Photonics North 2007; 67961C (2007) https://doi.org/10.1117/12.778738
Event: Photonics North 2007, 2007, Ottawa, Canada
Abstract
We report the realization of a Bragg grating optical filter at telecommunication wavelengths in silicon-on-insulator (SOI) through the use of ion implantation induced refractive index modulation. Silicon self-irradiation damage accumulation results in an increase of the refractive index to a saturated value, upon amorphization, of approximately 3.75. This makes it an interesting candidate for passive gratings as the silicon retains a planar surface, making it ideal for further processing. Monte Carlo simulations and coupled mode theory demonstrate the viability of the approach. Planar implanted SOI waveguides showed extinction ratios of -5 dB for TE and -2 dB for TM. An annealing study suggests complete amorphization was not achieved and future results should be improved dramatically.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. P. Bulk, A. P. Knights, and P. E. Jessop "Ion implanted integrated Bragg gratings in SOI waveguides", Proc. SPIE 6796, Photonics North 2007, 67961C (26 October 2007); https://doi.org/10.1117/12.778738
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