8 November 2007 Fabrication and characterization of an SOI-based thermally tuned phase modulator
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Proceedings Volume 6796, Photonics North 2007; 679632 (2007) https://doi.org/10.1117/12.779380
Event: Photonics North 2007, 2007, Ottawa, Canada
Abstract
The key process steps in the fabrication of a thermally-tuned silicon-on-insulator (SOI) based phase modulator are detailed. By altering the waveguide temperature, the thermo-optic effect is used to vary the modulator's output. Additionally, various experimental approaches are used to determine the operating characteristics of the resulting device. This includes a swept wave system (SWS) suitable for testing the performance of the phase modulator. Analyses will yield such measurements as insertion loss, polarization dependent loss (PDL), peak wavelength, and ripple period.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Asuquo B. Eniang, Asuquo B. Eniang, Bassey E. Obiesio, Bassey E. Obiesio, Kufre Akpan, Kufre Akpan, Christopher Raum, Christopher Raum, "Fabrication and characterization of an SOI-based thermally tuned phase modulator", Proc. SPIE 6796, Photonics North 2007, 679632 (8 November 2007); doi: 10.1117/12.779380; https://doi.org/10.1117/12.779380
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