Paper
26 September 2007 Markets and technology needs for UHB-LEDs
Author Affiliations +
Proceedings Volume 6797, Manufacturing LEDs for Lighting and Displays; 679703 (2007) https://doi.org/10.1117/12.760009
Event: Manufacturing LEDs for Lighting and Display, 2007, Berlin, Germany
Abstract
With an annual volume of more than 5 million units of 2" equivalent substrates, GaN-based LED is the main eater of nitride materials targeting a $3.5B market at devices level. The next big challenge for LED business is to take market shares over the general lighting industry and dollar per lumen ($/lm) ratio is the key parameter. Numerous technological improvements are under investigation: - At die level, photonic crystals and surface texturing technologies are jointly developed to increase the light extraction. External Quantum Efficiency EQE has now reached > 75% at R&D level. - At material level, there is a rapid emergence of new substrates for GaN epitaxy and composite substrates in 6" diameter. That is opening new doors to higher LED luminous efficiency and cost reduction toward the gigantic SSL general illumination business.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Philippe Roussel "Markets and technology needs for UHB-LEDs", Proc. SPIE 6797, Manufacturing LEDs for Lighting and Displays, 679703 (26 September 2007); https://doi.org/10.1117/12.760009
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KEYWORDS
Light emitting diodes

Gallium nitride

LED displays

Sapphire

LED backlight

Silicon carbide

LED lighting

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