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26 September 2007 GaInN LEDs: straight way for solid state lighting
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Proceedings Volume 6797, Manufacturing LEDs for Lighting and Displays; 67970E (2007) https://doi.org/10.1117/12.759472
Event: Manufacturing LEDs for Lighting and Display, 2007, Berlin, Germany
Abstract
With the new Generation of InGaN-based thinfilm Chips efficacies of 110/lm/W and output power of 32 mW at 20 mA (5 mm Radial lamp, 438nm, chip-size 255&mgr;m x 460&mgr;m) are reached. Due to the scalability of the ThinGaN concept chip brightness and efficiency are scalable to larger chip sizes: the brightness achieved for a 1 mm2 ThinGaN Power chip at 350 mA were 495mW (445nm) and 202mW or 100 lm (527nm). White LEDs with phosphorus achieved 102 lm at 350mA, mounted in an OSTAR module with six LED chips 1200 lm were demonstrated at 1000 mA driving current. White emitting automotive headlamp modules with 620lm (5x 1mm2 chip at 700mA) and 41 MCd/m2 as well as green emitting projection modules with 57 MCd/m2 at 2A/mm2 drive current and 12mm2 chip area are realized. These technological improvements demonstrate the straight way of GaInN-LEDs for Solid State lighting.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
U. Zehnder, B. Hahn, J. Baur, M. Peter, S. Bader, H. J. Lugauer, and A. Weimar "GaInN LEDs: straight way for solid state lighting", Proc. SPIE 6797, Manufacturing LEDs for Lighting and Displays, 67970E (26 September 2007); https://doi.org/10.1117/12.759472
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