26 September 2007 Enhanced efficiency of near-UV emitting LEDs for solid state lighting applications
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Proceedings Volume 6797, Manufacturing LEDs for Lighting and Displays; 67970O (2007) https://doi.org/10.1117/12.758799
Event: Manufacturing LEDs for Lighting and Display, 2007, Berlin, Germany
Abstract
The performance of a series of near-UV (~385 nm) emitting LEDs, consisting of high efficiency InGaN/AlInGaN QWs in the active region, was investigated. Significantly reduced roll-over of efficiency at high current density was found compared to InGaN/GaN LEDs emitting at a similar wavelength. The importance of optical cavity effects in flip-chip geometry devices has also been investigated. The light output was enhanced by more than a factor of 2 when the light-emitting region was located at an anti-node position with respect to a high reflectivity current injection mirror. A power of 0.49 mW into a numerical aperture of 0.5 was obtained for a junction area of 50 micrometers in diameter and a current of 30 mA, corresponding to a radiance of 30 W/cm2/str.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
D. Zhu, B. Corbett, B. Roycroft, P. Maaskant, C. McAleese, M. Akhter, M. J. Kappers, C. J. Humphreys, "Enhanced efficiency of near-UV emitting LEDs for solid state lighting applications", Proc. SPIE 6797, Manufacturing LEDs for Lighting and Displays, 67970O (26 September 2007); doi: 10.1117/12.758799; https://doi.org/10.1117/12.758799
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