2 October 2007 Semiconductor nanowires for solid state lighting: simulation, epitaxy, integration, optical and electrical characterization
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Proceedings Volume 6797, Manufacturing LEDs for Lighting and Displays; 67970P (2007) https://doi.org/10.1117/12.768615
Event: Manufacturing LEDs for Lighting and Display, 2007, Berlin, Germany
Abstract
LEDs based on semiconductor nanowires are a promising alternative to the standard planar devices to achieve low cost high yield manufacturing for the general lighting applications. The expected advantages of such structures are a high crystalline quality of the heterostructures, compliance with a large range of substrates and light extraction enhancement. We report here on the present status of our research work concerning the electromagnetic simulation of nanowire emission, the epitaxy of near-UV semiconductor vertically aligned nanowires, the collective integration technology of these nanowires and their characterizations.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
F. Levy, F. Levy, Y. Desieres, Y. Desieres, P. Ferret, P. Ferret, S. Fichet, S. Fichet, S. Gidon, S. Gidon, P. Gilet, P. Gilet, P. Noel, P. Noel, I.-C. Robin, I.-C. Robin, E. Romain-Latu, E. Romain-Latu, M. Rosina, M. Rosina, R. Songmuang, R. Songmuang, G. Feuillet, G. Feuillet, B. Daudin, B. Daudin, A. Chelnokov, A. Chelnokov, } "Semiconductor nanowires for solid state lighting: simulation, epitaxy, integration, optical and electrical characterization", Proc. SPIE 6797, Manufacturing LEDs for Lighting and Displays, 67970P (2 October 2007); doi: 10.1117/12.768615; https://doi.org/10.1117/12.768615
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