A 4-8GHz CMOS active balun using a compensated single-FET topology

Leigh Milner

doi:10.1117/12.758878

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21 December 2007 A 4-8GHz CMOS active balun using a compensated single-FET topology

Leigh Milner

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Proceedings Volume 6798, Microelectronics: Design, Technology, and Packaging III; 679817 (2007) https://doi.org/10.1117/12.758878
Event: SPIE Microelectronics, MEMS, and Nanotechnology, 2007, Canberra, ACT, Australia

Abstract

A single-FET active balun has been developed with a phase imbalance of less than ±1.5° and amplitude imbalance less than ±0.6dB from 4 to 8 GHz using 0.25μm silicon-on-sapphire CMOS. The source terminal of the transistor has been compensated with a shunt capacitance to ground and increased value for the source resistance. The compensation network has improved the phase imbalance by 29° at 8 GHz. The circuit dissipates 15mW and is 260×300μm including AC coupling capacitors.

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Leigh Milner "A 4-8GHz CMOS active balun using a compensated single-FET topology", Proc. SPIE 6798, Microelectronics: Design, Technology, and Packaging III, 679817 (21 December 2007); https://doi.org/10.1117/12.758878

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