21 December 2007 Mechanical properties measurement of silicon nitride thin films using the bulge test
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Abstract
The mechanical properties of silicon nitride films are investigated. Freestanding films of silicon nitride are fabricated using the MEMS technique. The films were deposited onto (100) silicon wafers by LPCVD (Low Pressure Chemical Vapor Deposition). Square and rectangular membranes are made by anisotropic etching of the silicon substrates. Then the bulge test for silicon nitride film was carried out. The thickness of specimens was 0.5, 0.75 and 1μm respectively. By testing both square and rectangular membranes, the reliability and valiant-ness of bulge test with regard to the shape of specimens was investigated. Also considering residual stress in the films, one can evaluate the Young's modulus from experimental load-deflection curves. Young's modulus of the silicon nitride films was about 232GPa. The residual stress is below 100MPa.
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Hun Kee Lee, Hun Kee Lee, Seong Hyun Ko, Seong Hyun Ko, Jun Soo Han, Jun Soo Han, HyunChul Park, HyunChul Park, "Mechanical properties measurement of silicon nitride thin films using the bulge test", Proc. SPIE 6798, Microelectronics: Design, Technology, and Packaging III, 67981C (21 December 2007); doi: 10.1117/12.759587; https://doi.org/10.1117/12.759587
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