9 January 2008 Point defect engineered Si sub-bandgap light-emitting diodes
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Abstract
We present a novel approach to enhance light emission in Si and demonstrate sub-bandgap light-emitting diodes (LED) based on the introduction of point defects. Ion implantation, pulsed laser melting and rapid thermal annealing were used to create LEDs containing self-interstitial-rich optically active regions. Procedures to fabricate LEDs on a bulk silicon substrate and on a silicon-on-insulator (SOI) wafer will be presented, and methods to improve device performances will be discussed. The control and utilization of point defects represents a new approach toward creating Si in a stable, optically active form for Si-based optoelectronics.
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Jiming Bao, Supakit Charnvanichborikarn, Yu Yang, Malek Tabbal, Byungha Shin, Jennifer Wong-Leung, James S. Williams, Michael J. Aziz, Federico Capasso, "Point defect engineered Si sub-bandgap light-emitting diodes", Proc. SPIE 6800, Device and Process Technologies for Microelectronics, MEMS, Photonics, and Nanotechnology IV, 68000T (9 January 2008); doi: 10.1117/12.758543; https://doi.org/10.1117/12.758543
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