9 January 2008 Point defect engineered Si sub-bandgap light-emitting diodes
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We present a novel approach to enhance light emission in Si and demonstrate sub-bandgap light-emitting diodes (LED) based on the introduction of point defects. Ion implantation, pulsed laser melting and rapid thermal annealing were used to create LEDs containing self-interstitial-rich optically active regions. Procedures to fabricate LEDs on a bulk silicon substrate and on a silicon-on-insulator (SOI) wafer will be presented, and methods to improve device performances will be discussed. The control and utilization of point defects represents a new approach toward creating Si in a stable, optically active form for Si-based optoelectronics.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jiming Bao, Jiming Bao, Supakit Charnvanichborikarn, Supakit Charnvanichborikarn, Yu Yang, Yu Yang, Malek Tabbal, Malek Tabbal, Byungha Shin, Byungha Shin, Jennifer Wong-Leung, Jennifer Wong-Leung, James S. Williams, James S. Williams, Michael J. Aziz, Michael J. Aziz, Federico Capasso, Federico Capasso, } "Point defect engineered Si sub-bandgap light-emitting diodes", Proc. SPIE 6800, Device and Process Technologies for Microelectronics, MEMS, Photonics, and Nanotechnology IV, 68000T (9 January 2008); doi: 10.1117/12.758543; https://doi.org/10.1117/12.758543


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