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29 February 2008 A low-noise wide dynamic range CMOS image sensor with low and high temperatures resistance
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Abstract
A temperature-resistant 1/3 inch SVGA (800×600 pixels) 5.6 μm pixel pitch wide-dynamic-range (WDR) CMOS image sensor has been developed using a lateral-over-flow-integration-capacitor (LOFIC) in a pixel. The sensor chips are fabricated through 0.18 μm 2P3M process with totally optimized front-end-of-line (FEOL) & back-end-of-line (BEOL) for a lower dark current. By implementing a low electrical field potential design for photodiodes, reducing damages, recovering crystal defects and terminating interface states in the FEOL+BEOL, the dark current is improved to 12 e- /pixel-sec at 60 deg.C with 50% reduction from the previous very-low-dark-current (VLDC) FEOL and its contribution to the temporal noise is improved. Furthermore, design optimizations of the readout circuits, especially a signal-and noise-hold circuit and a programmable-gain-amplifier (PGA) are also implemented. The measured temporal noise is 2.4 e-rms at 60 fps (:36 MHz operation). The dynamic-range (DR) is extended to 100 dB with 237 ke- full well capacity. In order to secure the temperature-resistance, the sensor chip also receives both an inorganic cap onto micro lens and a metal hermetic seal package assembly. Image samples at low & high temperatures show significant improvement in image qualities.
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Koichi Mizobuchi, Satoru Adachi, Jose Tejada, Hiromichi Oshikubo, Nana Akahane, and Shigetoshi Sugawa "A low-noise wide dynamic range CMOS image sensor with low and high temperatures resistance", Proc. SPIE 6816, Sensors, Cameras, and Systems for Industrial/Scientific Applications IX, 681604 (29 February 2008); https://doi.org/10.1117/12.765871
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