7 January 2008 Next-generation high-power, high-efficiency diode lasers at Spectra-Physics
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Abstract
This paper gives an overview of recent product development and advanced engineering of diode laser technology at Spectra-Physics. Focused development of device design, heat-sinking and beam-conditioning has yielded significant improvement in both power conversion efficiency (PCE) and reliable power, leading to a family of new products. CW PCEs of 60% to 70% have been delivered for the 880 to 980 nm wavelength range. For 780 to 810 nm, PCE are typically between 50% and 56%. Comprehensive life-testing indicates that the reliable powers of devices based on the new developments exceed those of established, highly reliable, production designs. For the progress of ultra-high power bars, CW output power in excess of 1000 W and 640 W have been demonstrated from single laser bars with doubled-side and single-side cooling, respectively. Spatial power density of greater than 2.8 kW/cm2 and FWHM spectral widths of 3.5 nm have been obtained from laser stacks.
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Hanxuan Li, Hanxuan Li, Irving Chyr, Irving Chyr, Denny Brown, Denny Brown, Frank Reinhardt, Frank Reinhardt, Oscar Romero, Oscar Romero, Chia-Hung Chen, Chia-Hung Chen, Robert Miller, Robert Miller, Kiran Kuppuswamy, Kiran Kuppuswamy, Xu Jin, Xu Jin, Touyen Ngugen, Touyen Ngugen, Terry Towe, Terry Towe, Trevor Crum, Trevor Crum, Cameron Mitchell, Cameron Mitchell, Tom Truchan, Tom Truchan, Robert Bullock, Robert Bullock, Ed Wolak, Ed Wolak, Jeff Mott, Jeff Mott, James Harrison, James Harrison, } "Next-generation high-power, high-efficiency diode lasers at Spectra-Physics", Proc. SPIE 6824, Semiconductor Lasers and Applications III, 68240S (7 January 2008); doi: 10.1117/12.754803; https://doi.org/10.1117/12.754803
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