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7 January 2008 Demonstration and control of the fast-absorption recovery times of the InGaN/GaN quantum well saturable absorbers
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Abstract
InGaN/GaN multiple quantum well samples were grown by metal organic chemical vapor deposition with thinner low-temperature GaN buffers than that in the conventional structure. It was found that the absorption recovery times of the InGaN/GaN quantum wells can be controlled by varying the thickness of the low-temperature GaN buffers. Transmission electron microscopy results showed that increased dislocations were introduced in the quantum well region with decreased low-temperature GaN buffer thickness. The degraded crystalline quality of the absorbing regions caused an increased density of nonradiative recombination centers, which were responsible for the fast recovery of the absorption.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Fen Lin, Ning Xiang, Peng Chen, Soo Jin Chua, Afshan Irshad, Stefan Roither, Audrius Pugzlys, and Andrius Baltuska "Demonstration and control of the fast-absorption recovery times of the InGaN/GaN quantum well saturable absorbers", Proc. SPIE 6824, Semiconductor Lasers and Applications III, 68240T (7 January 2008); https://doi.org/10.1117/12.756401
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