Paper
7 January 2008 1080nm optically pumped vertical-external-cavity surface-emitting laser
Peng Zhang, Yanrong Song, Xinping Zhang, Zhigang Zhang
Author Affiliations +
Abstract
The edge emitting PL spectrum of semiconductor gain chip used in vertical external cavity surface emitting lasers was theoretically calculated by using Lorenz linear function when considering of the intraband relaxation and the valence band coupling. A model of laser output which considered of thermal effect was used to simulate our VECSELs' output power. The theoretical results were in good agreement with the experimental results. The factors which influence the output wavelength were discussed too.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Peng Zhang, Yanrong Song, Xinping Zhang, and Zhigang Zhang "1080nm optically pumped vertical-external-cavity surface-emitting laser", Proc. SPIE 6824, Semiconductor Lasers and Applications III, 68240W (7 January 2008); https://doi.org/10.1117/12.754960
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CITATIONS
Cited by 1 scholarly publication.
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KEYWORDS
Quantum wells

Reflectivity

Thermal effects

Optical pumping

Quantum efficiency

Semiconducting wafers

Semiconductor lasers

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