7 January 2008 1080nm optically pumped vertical-external-cavity surface-emitting laser
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The edge emitting PL spectrum of semiconductor gain chip used in vertical external cavity surface emitting lasers was theoretically calculated by using Lorenz linear function when considering of the intraband relaxation and the valence band coupling. A model of laser output which considered of thermal effect was used to simulate our VECSELs' output power. The theoretical results were in good agreement with the experimental results. The factors which influence the output wavelength were discussed too.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Peng Zhang, Peng Zhang, Yanrong Song, Yanrong Song, Xinping Zhang, Xinping Zhang, Zhigang Zhang, Zhigang Zhang, } "1080nm optically pumped vertical-external-cavity surface-emitting laser", Proc. SPIE 6824, Semiconductor Lasers and Applications III, 68240W (7 January 2008); doi: 10.1117/12.754960; https://doi.org/10.1117/12.754960


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