4 January 2008 1.31-μm GaInNAs lasers fabricated with pulsed anodic oxidation
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Semiconductor lasers at wavelengths around 1.3μm are widely used for optic communications. For GaInNAs, the incorporation of nitrogen in the active layer can reduce the band-gap energy and allow emission wavelengths as long as 1.3μm. Ridge waveguide GaInNAs strain single-quantum-well lasers were fabricated with pulsed anodic oxidation (PAO). Using the technology PAO, we prevented the damage from the ion bombardment in the procedure of sputtering silicon dioxide used for building the insulating film. The output power of the laser with a wavelength of 1.31μm reached 14mW in CW mode at room temperature. The threshold-current was 18mA and its density was 360A/cm2. The characteristic temperature of lasers was 135.1K and the quantum efficiency reached 76%.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yun Deng, Yun Deng, Yi Qu, Yi Qu, Zhongliang Qiao, Zhongliang Qiao, Huimin Zou, Huimin Zou, Yuming Wang, Yuming Wang, Zhanguo Li, Zhanguo Li, } "1.31-μm GaInNAs lasers fabricated with pulsed anodic oxidation", Proc. SPIE 6825, Lasers in Material Processing and Manufacturing III, 68250Q (4 January 2008); doi: 10.1117/12.756735; https://doi.org/10.1117/12.756735

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