4 January 2008 Process investigation of a-Si:H thin films prepared by DC magnetron sputtering
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Abstract
Hydrogenated amorphous silicon (a-Si:H) thin films have been prepared by DC magnetron sputtering, and the effect of sputtering power, the hydrogen flow rate on deposition rate and the optical properties of a-Si:H thin films have been investigated. The hydrogen content (CH) of the films was calculated by Fourier transform infrared (FTIR) spectroscopy method, the maximum CH was obtained at 11at. %,and a bandgap of a-Si:H thin films was changed from 1.43 to 2.25 eV with different CH. It was found that the refractive index (n) and extinction coefficient (k) of the prepared films decreased with the increase of CH. The results provided experimental basis for preparing a-Si:H thin films with special performance and structure .
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Chunling Liu, Chunling Liu, Chunwu Wang, Chunwu Wang, Yanping Yao, Yanping Yao, Yuxia Wang, Yuxia Wang, Baoxue Bo, Baoxue Bo, } "Process investigation of a-Si:H thin films prepared by DC magnetron sputtering", Proc. SPIE 6825, Lasers in Material Processing and Manufacturing III, 682514 (4 January 2008); doi: 10.1117/12.754917; https://doi.org/10.1117/12.754917
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