The &#956;c-Si on plastic substrate crystallized by pulsed double-frequency YAG laser annealing

Juan Li; Zhiguo Meng; Yang Li; Chunya Wu; Hoi Sing Kwok; Shaozhen Xiong

doi:10.1117/12.757497

1 February 2008 The μc-Si on plastic substrate crystallized by pulsed double-frequency YAG laser annealing

Juan Li, Zhiguo Meng, Yang Li, Chunya Wu, Hoi Sing Kwok, Shaozhen Xiong

Proceedings Volume 6825, Lasers in Material Processing and Manufacturing III; 682519 (2008) https://doi.org/10.1117/12.757497
Event: Photonics Asia 2007, 2007, Beijing, China

Abstract

Microcrystalline silicon (μc-Si) thin film transistors (TFTs) can be provided with higher mobility and stability than a-Si and better uniformity than poly-Si TFTs, it would be more suitable to be applied in larger area AMOLED. By using 2ωYAG laser annealing, crystalline μc-Si thin film on plastic substrate has been investigated and the proper laser energy needed for crystallization has been indicated. It has been found that the dehydrogenation process at 300~450 °C for a few of hours could be omitted by decreasing the H content in the crystallization precursor, which is suitable for laser crystallization on plastic substrate. The crystalline volume fraction (Xc) and the grain size of the resulted μc-Si could be adjusted by controlling the laser energy. By this method, the μc-Si on plastic substrate with the Xc and the grain size are 85% (at the maximum) and 50nm respectively has been achieved.

Citation Download Citation

Juan Li, Zhiguo Meng, Yang Li, Chunya Wu, Hoi Sing Kwok, and Shaozhen Xiong "The μc-Si on plastic substrate crystallized by pulsed double-frequency YAG laser annealing", Proc. SPIE 6825, Lasers in Material Processing and Manufacturing III, 682519 (1 February 2008); https://doi.org/10.1117/12.757497

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