21 November 2007 Analysis of the resolution doubling technique of high-resolution gratings by x-ray lithography
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Grating patterns with approximately 150 nm period were achieved by X-ray lithography with a single exposure through a 300 nm period grating mask, which was manufactured by e-beam lithography. BPM simulation of the X-ray propagation through the mask structure, which acts here in a way much like that of a wave guide with many layers, was carried out. Considering also the light propagation in the uniform space between the mask and the wafer, preferable parameters of the optical setup, such as the exposure dose, the distance between the mask and the wafer, and resist thickness, are suggested and their process windows are discussed. The dependence of the resulted pattern profiles on the mask design is analyzed and an optimized design of the mask grating is presented for this process. By carefully choosing the process parameters, the doubling of grating resolution by X-ray lithography can be expected under precise control.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jie Ma, Jie Ma, Xiaoli Zhu, Xiaoli Zhu, Changqing Xie, Changqing Xie, Ming Liu, Ming Liu, Min Zhao, Min Zhao, Ji Jiang, Ji Jiang, } "Analysis of the resolution doubling technique of high-resolution gratings by x-ray lithography", Proc. SPIE 6827, Quantum Optics, Optical Data Storage, and Advanced Microlithography, 68272A (21 November 2007); doi: 10.1117/12.757819; https://doi.org/10.1117/12.757819


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