4 January 2008 Light emission from controlled multilayer comprising of thin amorphous and nanocrystalline silicon carbide layers
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Abstract
The multilayer structure composed of thin amorphous and nanocrystalline silicon carbide layers (a-SiC/nc-SiC) was prepared by the helicon wave plasma-enhanced chemical vapor deposition technique. Scanning electron microscopy and atomic force microscopy results show that the successive layers of a-SiC/nc-SiC is reproducible and the nanocrystalline grains can grow homogeneously for this multilayer structure. The optical emission property has been investigated by means of photoluminescence (PL) analysis. The red-shift of PL peak energy with increasing the excitation wavelength suggested that the optical emission originated from the quantum confinement effect of SiC nanocrystallites. A narrower PL band and smaller PL stokes-shifts are observed from the multilayer compared with normal nc-SiC film.
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Wei Yu, Ligong Li, Yachao Li, Jie Du, Xuecheng Ding, Shuangkui Cui, Guangsheng Fu, "Light emission from controlled multilayer comprising of thin amorphous and nanocrystalline silicon carbide layers", Proc. SPIE 6831, Nanophotonics, Nanostructure, and Nanometrology II, 68311C (4 January 2008); doi: 10.1117/12.757528; https://doi.org/10.1117/12.757528
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