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4 January 2008 Amending the uniformity of ion beam current density profile
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Abstract
The uniformity of ion beam current density profile has been amended by changing the flow of the gas and making a new beam channel. The platform scanned in the horizontal orientation in this experiment, so the horizontal ion beam current distribution had hardly any effect on the etching uniformity and amending the ion beam current density profile in the vertical orientation was sufficient for the purpose of plat etching profile. The ratio of the ion source's working gas inputs has some effect for the uniformity and a ratio of 6.50sccm: 8.00sccm: 9.60sccm of the three gas inputs flow1: flow2: flow3 will lead to a more uniform profile. According to the horizontal distribution and the original vertical ion beam current density distribution measured by Faraday Cup, a new beam channel was made. The uniformity of ion beam current density profile is enhanced from ±4.31%to ±1.96% in this experiment.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xiaowei Zhou, Dequan Xu, Ying Liu, Xiangdong Xu, and Shaojun Fu "Amending the uniformity of ion beam current density profile", Proc. SPIE 6832, Holography and Diffractive Optics III, 68322N (4 January 2008); https://doi.org/10.1117/12.757750
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