Reactive ion beam etching of multilayer diffraction gratings with SiO<sub>2</sub> as the top layer

Ying Liu; Xiangdong Xu; Yilin Hong; Dequan Xu; Shaojun Fu

doi:10.1117/12.758011

4 January 2008 Reactive ion beam etching of multilayer diffraction gratings with SiO₂ as the top layer

Ying Liu, Xiangdong Xu, Yilin Hong, Dequan Xu, Shaojun Fu

Proceedings Volume 6832, Holography and Diffractive Optics III; 68322O (2008) https://doi.org/10.1117/12.758011
Event: Photonics Asia 2007, 2007, Beijing, China

Abstract

Multilayer dielectric grating plays an important role in the laser inertial confinement fusion, which is fabricated by using holographic lithography and ion beam etching. In this paper details the reactive ion beam etching of multilayer dielectric grating with SiO₂ as the top layer. The etching of SiO₂ was carried out by a radio frequency reactive ion beam etcher with CHF₃ chemistry to increase the etch selectivity and get a high fidelity grating pattern transfer from photoresist into SiO₂ coating. The photoresist gratings with different profiles as masks were used to create SiO₂ corrugations with different profiles separately. The etching results were analyzed in detail, including the facet and redeposition effects. In conclusion, it is essential that the photoresist grating mask should be high and steep enough to get SiO₂ grating with vertical profiles. The multilayer dielectric grating with SiO₂ as the top layer exhibited an efficiency of about 95% in the - 1 order at TE polarization of 1 064 nm light at Littrow mounting.

Citation Download Citation

Ying Liu, Xiangdong Xu, Yilin Hong, Dequan Xu, and Shaojun Fu "Reactive ion beam etching of multilayer diffraction gratings with SiO₂ as the top layer", Proc. SPIE 6832, Holography and Diffractive Optics III, 68322O (4 January 2008); https://doi.org/10.1117/12.758011

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