Paper
28 November 2007 Simultaneous defect inspection on the surface and in the interior of bare wafers using a simple knife-edge test
Jun Ho Lee, Yongmin Kim, Jinseoub Kim, Yeong-eun Yoo
Author Affiliations +
Abstract
This paper proposes a new, simple, high-speed wafer-inspection method using a knife-edge approach. This method basically corresponds to a bright-field microscope except the light reflected from the wafer surface is partially cut by a knife-edge, which increases edge contrast in the cutting direction. In addition, the knife-edge test does not depend on the light wavelength and thus the light can have any wavelength as far as it is reflected by the wafer surface. Therefore, the knife-edge test, which uses visible light, can be employed simultaneously with a looking through inspection technique, which uses infra-red, with a single white-light source. The knife-edge method in tandem with a looking through inspection is implemented at a laboratory level and preliminary experimental results demonstrating edge enhancement are presented.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jun Ho Lee, Yongmin Kim, Jinseoub Kim, and Yeong-eun Yoo "Simultaneous defect inspection on the surface and in the interior of bare wafers using a simple knife-edge test", Proc. SPIE 6834, Optical Design and Testing III, 683417 (28 November 2007); https://doi.org/10.1117/12.747730
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KEYWORDS
Semiconducting wafers

Inspection

Microscopes

Visible radiation

Charge-coupled devices

Infrared imaging

Mirrors

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