8 January 2008 256×1 element linear InGaAs short wavelength near-infrared detector arrays
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Abstract
256×1 element linear InGaAs detector arrays assembly have been fabricated for the short wave infrared band(0.9~1.7μm), including the detector, CMOS readout circuits, thermoelectric cooler in a sealed package. The InGaAs detectors were achieved by mesa structure on the p-InP/i-InGaAs/n-InP double hetero-structure epitaxial material. 256×1 element linear InGaAs detectors were wire-bonded to 128×1 element odd and even ROIC, which were packaged in a dual-in-line package by parallel sealing. The characteristics of detectors and detector arrays module were investigated at the room temperature. The detector shows response peak at 1.62μm with 50% cutoff wavelength of 1.73μm and average R0A with 5.02KΩ•cm2. Response non-uniformity and average peak detectivity of 256×1 element linear InGaAs detector arrays are 3.10% and 1.38×1012cmHz1/2/W, respectively.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xue Li, Xue Li, Hengjing Tang, Hengjing Tang, Guangyu Fan, Guangyu Fan, Dafu Liu, Dafu Liu, Xiumei Shao, Xiumei Shao, Yonggang Zhang, Yonggang Zhang, Haiyan Zhang, Haiyan Zhang, Xinyu Chen, Xinyu Chen, Sangen Zhu, Sangen Zhu, Haimei Gong, Haimei Gong, Jiaxiong Fang, Jiaxiong Fang, } "256×1 element linear InGaAs short wavelength near-infrared detector arrays", Proc. SPIE 6835, Infrared Materials, Devices, and Applications, 683505 (8 January 2008); doi: 10.1117/12.755599; https://doi.org/10.1117/12.755599
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