8 January 2008 256×1 element linear InGaAs short wavelength near-infrared detector arrays
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Abstract
256×1 element linear InGaAs detector arrays assembly have been fabricated for the short wave infrared band(0.9~1.7μm), including the detector, CMOS readout circuits, thermoelectric cooler in a sealed package. The InGaAs detectors were achieved by mesa structure on the p-InP/i-InGaAs/n-InP double hetero-structure epitaxial material. 256×1 element linear InGaAs detectors were wire-bonded to 128×1 element odd and even ROIC, which were packaged in a dual-in-line package by parallel sealing. The characteristics of detectors and detector arrays module were investigated at the room temperature. The detector shows response peak at 1.62μm with 50% cutoff wavelength of 1.73μm and average R0A with 5.02KΩ•cm2. Response non-uniformity and average peak detectivity of 256×1 element linear InGaAs detector arrays are 3.10% and 1.38×1012cmHz1/2/W, respectively.
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Xue Li, Hengjing Tang, Guangyu Fan, Dafu Liu, Xiumei Shao, Yonggang Zhang, Haiyan Zhang, Xinyu Chen, Sangen Zhu, Haimei Gong, Jiaxiong Fang, "256×1 element linear InGaAs short wavelength near-infrared detector arrays", Proc. SPIE 6835, Infrared Materials, Devices, and Applications, 683505 (8 January 2008); doi: 10.1117/12.755599; https://doi.org/10.1117/12.755599
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