8 January 2008 Properties of Au/Pt/Ti contact to p-InP by rapid thermal processing
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Abstract
We found that the contact resistance of Au/Pt/Ti on p-InP increases with the increase of annealing time and annealing temperature. Au/Pt/Ti is ohmic contact metal as deposited with specific contact resistance of 2.49×10-3 Ωcm2 when p-InP doped by 7.5×1018 cm-3 and is Schottky contact when doped by 2×1018 cm-3. Surface morphologies of Au/Pt/Ti after rapid thermal processing (RTP) were analyzed by atom force microscopy (AFM). An interface layer dominated by TiIn compound, which increase the specific contact resistance, was found in Auger electron spectroscopy (AES) analysis. P-InP and n-InP ohmic contacts can be achieved at the same time as deposited when added p-In0.53Ga0.47As layer on p-InP/InGaAs/n-InP without annealing.
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Yanqiu Lv, Yanqiu Lv, Hengjing Tang, Hengjing Tang, Bing Han, Bing Han, Xiaoli Wu, Xiaoli Wu, Kefeng Zhang, Kefeng Zhang, Xue Li, Xue Li, Haimei Gong, Haimei Gong, } "Properties of Au/Pt/Ti contact to p-InP by rapid thermal processing", Proc. SPIE 6835, Infrared Materials, Devices, and Applications, 68350D (8 January 2008); doi: 10.1117/12.756554; https://doi.org/10.1117/12.756554
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