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8 January 2008 Properties of Au/Pt/Ti contact to p-InP by rapid thermal processing
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We found that the contact resistance of Au/Pt/Ti on p-InP increases with the increase of annealing time and annealing temperature. Au/Pt/Ti is ohmic contact metal as deposited with specific contact resistance of 2.49×10-3 Ωcm2 when p-InP doped by 7.5×1018 cm-3 and is Schottky contact when doped by 2×1018 cm-3. Surface morphologies of Au/Pt/Ti after rapid thermal processing (RTP) were analyzed by atom force microscopy (AFM). An interface layer dominated by TiIn compound, which increase the specific contact resistance, was found in Auger electron spectroscopy (AES) analysis. P-InP and n-InP ohmic contacts can be achieved at the same time as deposited when added p-In0.53Ga0.47As layer on p-InP/InGaAs/n-InP without annealing.
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Yanqiu Lv, Hengjing Tang, Bing Han, Xiaoli Wu, Kefeng Zhang, Xue Li, and Haimei Gong "Properties of Au/Pt/Ti contact to p-InP by rapid thermal processing", Proc. SPIE 6835, Infrared Materials, Devices, and Applications, 68350D (8 January 2008);

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