8 January 2008 High uniformity InGaAs linear mesa-type SWIR focal plane arrays
Author Affiliations +
In this paper, 256 elements front-illuminated InGaAs mesa detector arrays were fabricated based on doped-InGaAs absorbing layer in MOCVD-grown p-InP/n-InGaAs/n-InP double-heterostructure epitaxial materials. The processing includes mesa-making, SiNx passivation, growth of electrodes and so on. The current-voltage, capacitance-voltage characteristics and response spectrum of the detector were measured. The results indicate that the InGaAs detector has typical dark current about 0.9 nA at 0.5 V reverse-bias voltage, a capacitance as low as 49 pF at 1 reverse-bias voltage, and the peak wavelength and cutoff wavelength at 1.57μm and 1.68μm respectively. The InGaAs detector arrays were connected with two CTIA-structured L128 read-out integrated circuits, and the response signal and noise were obtained. At room temperature, the mean peak detectivity of the InGaAs focal plane arrays (FPAs) is 1.9×1012 cmHz1/2W-1, and the non-uniformity of response is superior to 6%. The laser beam induced current (LBIC) technique was used to investigate the crosstalk and photoactive area of the InGaAs detectors. Its results indicate that there is little crosstalk between two neighbor InGaAs detectors, about 7%. The photoactive area of InGaAs detector extends about 4.5 μm, and the reason is analyed in the paper.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hengjing Tang, Hengjing Tang, Xiaoli Wu, Xiaoli Wu, Kefeng Zhang, Kefeng Zhang, Liping Ye, Liping Ye, Nili Wang, Nili Wang, Xue Li, Xue Li, Haimei Gong, Haimei Gong, } "High uniformity InGaAs linear mesa-type SWIR focal plane arrays", Proc. SPIE 6835, Infrared Materials, Devices, and Applications, 683516 (8 January 2008); doi: 10.1117/12.753653; https://doi.org/10.1117/12.753653

Back to Top