Paper
17 January 2008 Growth and characterization of <110> oriented ZnTe single crystal
Reng Wang, Weizheng Fang, Pei Zhao, Caihong Zhang, Lei Zhang, Jin Ge, Huier Zhang, Jun Shao, Shuhong Hu, Xuemin Shen, Ning Dai
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Abstract
ZnTe crystal has been grown at a temperature as low as 1060°C using Te solvent method. X-ray diffraction showed that the ZnTe crystals were grown from <110> oriented. The transmission was over 60% from 2 μm to 22 μm by using Fourier Transform Infrared Spectrometer. The etch pit density in the sliced wafer was about 2×104 cm-2 detected by Scan Electronic Microscopic. The transmission spectrums were measured from 0.2 to 3 THz by using Terahertz Time Domain Spectroscopy. And the refractive index and extinction coefficient were obtained through analysis of the time domain waveform.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Reng Wang, Weizheng Fang, Pei Zhao, Caihong Zhang, Lei Zhang, Jin Ge, Huier Zhang, Jun Shao, Shuhong Hu, Xuemin Shen, and Ning Dai "Growth and characterization of <110> oriented ZnTe single crystal", Proc. SPIE 6835, Infrared Materials, Devices, and Applications, 683519 (17 January 2008); https://doi.org/10.1117/12.754091
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Cited by 2 scholarly publications.
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KEYWORDS
Crystals

Terahertz radiation

Spectroscopy

Tellurium

Absorption

Infrared spectroscopy

Refractive index

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