17 January 2008 Growth and characterization of <110> oriented ZnTe single crystal
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Abstract
ZnTe crystal has been grown at a temperature as low as 1060°C using Te solvent method. X-ray diffraction showed that the ZnTe crystals were grown from <110> oriented. The transmission was over 60% from 2 μm to 22 μm by using Fourier Transform Infrared Spectrometer. The etch pit density in the sliced wafer was about 2×104 cm-2 detected by Scan Electronic Microscopic. The transmission spectrums were measured from 0.2 to 3 THz by using Terahertz Time Domain Spectroscopy. And the refractive index and extinction coefficient were obtained through analysis of the time domain waveform.
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Reng Wang, Reng Wang, Weizheng Fang, Weizheng Fang, Pei Zhao, Pei Zhao, Caihong Zhang, Caihong Zhang, Lei Zhang, Lei Zhang, Jin Ge, Jin Ge, Huier Zhang, Huier Zhang, Jun Shao, Jun Shao, Shuhong Hu, Shuhong Hu, Xuemin Shen, Xuemin Shen, Ning Dai, Ning Dai, "Growth and characterization of <110> oriented ZnTe single crystal", Proc. SPIE 6835, Infrared Materials, Devices, and Applications, 683519 (17 January 2008); doi: 10.1117/12.754091; https://doi.org/10.1117/12.754091
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