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8 January 2008 Characterization of multilayered HgCdTe for MW/LW two-color application
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Abstract
Dual color detection is a major concept of the third generation infrared focal plane arrays sensors (FPAs) for increasing the demand of target identification. The performance of these detectors are largely relied on the growth capability of HgCdTe multilayered structure. This paper presents our preliminary results on growth of MW/LW two-color structure by using molecular beam epitaxy. The detector had NPpn architecture, with indium doped n-type bottom (window) layer and Hg-vacancy doped MW and LW p-type layers. The top n-type layer was ion implanted by using B+. The compositions (mole fraction x) of each layers and its gradient at the interfaces were measured by infrared transmission, SIMS and SEM. The In doping layer was analyzed by SIMS. The electrical properties of In doping layer were measured by Hall effects measurements. It was found that the structure obtained agreed well with the growth design. MW/LW two color detectors of a 64×64 format were fabricated by mesa delineation, and the optimum structure was also discussed.
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Qingzhu Wei, Wenhong Zhou, Weiqiang Wang, Xiangliang Fu, Meifang Yu, Lu Chen, Yan Wu, and Li He "Characterization of multilayered HgCdTe for MW/LW two-color application", Proc. SPIE 6835, Infrared Materials, Devices, and Applications, 68351T (8 January 2008); https://doi.org/10.1117/12.757145
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