For higher-power-handling RF MEMS switches, the design of the switch is based on fixed-fixed beam capacitive structure with electrostatic actuation. Such RF MEMS switches are perceived to be unreliable because of the stiction and screening of the beam caused by charge accumulation in the dielectric layer. The research effort for a robust RF MEMS solution has been made for more than a decade. In this paper the models for stiction and screening caused by charge accumulation have been reviewed. As the first part of this paper, the possible charging mechanisms will be described, such as, 1) the dielectric charging arises from charges distributed throughout the dielectric material, 2) the presence of charges at the dielectric interface. In order to avoid the charge accumulation, trapped charges in the dielectric layer have to quickly vanish. Relaxing mechanisms of short time must be created inside of the dielectric for quick charge recombination. The second part of this paper will report the recent effort to create relaxing mechanisms of short time by using, such as doping dielectric, nano-composite dielectrics, or multi-layer stack of dielectric. Actuation wave form dependence of the charge accumulation will be also presented.