4 January 2008 Fabrication of wall array by electrochemical etching of n-type silicon
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Electrochemical etching of patterned n-type silicon in hydrofluoric acid (HF) solution has been employed as a useful micromachining technique. In this paper, 4 um pitch regular wall array structures with high aspect ratio (larger than 20) were fabricated in n-typed silicon with back side illuminating. Differing from common hole array's fabrication, undesired formation of separated pores along the trench bottom becomes a serious problem in the wall array's fabrication. By adjusting the etching current density, we have successfully suppressed this phenomenon. A theoretical analysis of the formation mechanism of wall array will also be discussed in this paper.
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Zhigang Zhao, Zhigang Zhao, Caili Bai, Caili Bai, Jinchuan Guo, Jinchuan Guo, Hanben Niu, Hanben Niu, } "Fabrication of wall array by electrochemical etching of n-type silicon", Proc. SPIE 6836, MEMS/MOEMS Technologies and Applications III, 68360W (4 January 2008); doi: 10.1117/12.755878; https://doi.org/10.1117/12.755878

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