8 January 2008 The equivalent circuit model on the room temperature electroluminescence from forward biased pin silicon diode
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Abstract
As the length scale of the devices decreases, electrons will spend increasingly more of their time in the connections between components; this interconnectivity problem could restrict further increases in computer chip processing power and speed. Considerable effort is therefore being expended on the development of efficient silicon light-emitting devices compatible with silicon based integrated circuit technology. Here, we describe the electrical and optical properties of Silicon positive intrinsic negative (pin) structure diode that operates at room temperature. The voltage-current and electroluminescence (EL) property are measured at room temperature for a silicon pin diode under forward biased current. The optical spectral response of the system at 700nm indicates that the emitting light source has low optical loss in Silicon. So the LED is suitable for Silicon optoelectronic interconnection system.[1][2] The rate-equation model for free carriers on light-emitting pin structure and the equivalent circuit model based on it have been presented. We have developed a way to calculate the model parameters by comparison with experimental results. This parameter extraction way can be fully accomplished automatically by using MATHCAD program and the equivalent circuit model is simulated by using HSPICE program respectively. The results of both experiment and simulation results are good agreement with each other.
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Bin Zhang, Lu-hong Mao, Shanguo Li, Wei-lian Guo, Shi-lin Zhang, Hui-lai Liang, "The equivalent circuit model on the room temperature electroluminescence from forward biased pin silicon diode", Proc. SPIE 6838, Optoelectronic Devices and Integration II, 68381G (8 January 2008); doi: 10.1117/12.753682; https://doi.org/10.1117/12.753682
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