8 January 2008 Research of different structure integrated photodetectors in standard CMOS technology
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Abstract
Three kinds of structure photodetectors, N+/N-Well/P-Substrate, P+/N-Well/P-Substrate and finger N+/N-Well/P-Substrate, have been fabricated in CSMC 0.5μm CMOS process. The characteristics of different photodetectors are comparatively tested. The N+/N-Well/P-Substrate photodetector is choosed for construction of novel Spice model and fabrication of OEIC chip, considered about both high responsivity and good response speed. A novel Spice model of photodetector is introduced for compatible-design of OEIC. At 780nm and 2.5V reverse bias, the simulated responsivity based on the Spice model is 0.251A/W, close to the measured value 0.253A/W. Finally, a full CMOS monolithic OEIC is successfully accomplished with a gain of 38.1mV/μW in 780nm for optical-disc signal pickup.
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Xiang Cheng, Xiang Cheng, Jiantao Bian, Jiantao Bian, Chao Chen, Chao Chen, Wei Chen, Wei Chen, } "Research of different structure integrated photodetectors in standard CMOS technology", Proc. SPIE 6838, Optoelectronic Devices and Integration II, 68381O (8 January 2008); doi: 10.1117/12.755698; https://doi.org/10.1117/12.755698
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