Study on annealed Pt/n-AlxGa1-xN MSM UV photodetectors

Xiangfeng Zhang; Weiguo Sun; Zhengxiong Lu; Caijing Cheng; Hongyan Zhao

doi:10.1117/12.756558

8 January 2008 Study on annealed Pt/n-Al_xGa_1-xN MSM UV photodetectors

Xiangfeng Zhang, Weiguo Sun, Zhengxiong Lu, Caijing Cheng, Hongyan Zhao

Proceedings Volume 6838, Optoelectronic Devices and Integration II; 68381S (2008) https://doi.org/10.1117/12.756558
Event: Photonics Asia 2007, 2007, Beijing, China

Abstract

Platinum was deposited on unintentionally doped n-Al_xGa_1-xN films grown by metal-organic chemical vapor deposition (MOCVD) to form MSM ultraviolet photodetectors. All devices were annealed for 10 min at different temperature in N₂ ambient. Results indicate that the generation of hillocks on the surface of Pt thin-film electrodes at the elevated temperatures due to relieving compressive stress affects the dark current directly. Dark current less than 10pA in the (-10V,10V) range was obtained from a device after annealing at 900°C. Both detectors show sharp spectral responsivity cutoff of about three orders of magnitude by 325nm and 315nm respectively.

Citation Download Citation

Xiangfeng Zhang, Weiguo Sun, Zhengxiong Lu, Caijing Cheng, and Hongyan Zhao "Study on annealed Pt/n-Al_xGa_1-xN MSM UV photodetectors", Proc. SPIE 6838, Optoelectronic Devices and Integration II, 68381S (8 January 2008); https://doi.org/10.1117/12.756558

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