14 January 2008 Quantum dots for terahertz devices
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Proceedings Volume 6840, Terahertz Photonics; 684011 (2008); doi: 10.1117/12.759892
Event: Photonics Asia 2007, 2007, Beijing, China
Abstract
Semiconductor nanostructures, such as quantum wells and quantum dots (QD), are well known, and some have been incorporated in applications. Here will focus on novel structures made of QDs and related devices for terahertz (THz) generation. Their potential advantages, such as low threshold current density, high characteristic temperature, increased differential gain, etc., make QDs promising candidates for light emitting applications in the THz region. Our idea of using resonant tunneling through QDs is presented, and initial results on devices consisting of self assembled InAs QDs in an undoped GaAs matrix, with a design incorporating GaInNAs/GaAs short period superlattice, are discussed. Moreover, shallow impurities are also being explored for possible THz emission: the idea is based on the tunneling through bound states of individual donor or acceptor impurities in the quantum well. Initial results on devices having an AlGaAs/GaAs double barrier resonant tunneling structure are discussed.
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H. C. Liu, B. Aslan, J. A. Gupta, Z. R. Wasilewski, G. C. Aers, A. J. SpringThorpe, M. Buchanan, "Quantum dots for terahertz devices", Proc. SPIE 6840, Terahertz Photonics, 684011 (14 January 2008); doi: 10.1117/12.759892; https://doi.org/10.1117/12.759892
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KEYWORDS
Gallium arsenide

Quantum wells

Terahertz radiation

Quantum dots

Doping

Magnetism

Indium arsenide

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